Radiation-induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima
نویسندگان
چکیده
R. G. Mani,1,* V. Narayanamurti,1 K. von Klitzing,2 J. H. Smet,2 W. B. Johnson,3 and V. Umansky4 1Harvard University, Gordon McKay Laboratory of Applied Science, 9 Oxford Street, Cambridge, Massachusetts 02138, USA 2Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany 3Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740, USA 4Braun Center for Submicron Research, Weizmann Institute, Rehovot 76100, Israel (Received 7 May 2003; revised manuscript received 29 April 2004; published 15 October 2004)
منابع مشابه
Effects of D-Doping on Characteristics of AlAs/GaAs Barriers Grown by Mba at 400 ??C
Effects of d-doping on barriers effective heights and series resistance of highly doped n-type GaAs/AIAs/GaAs/AlAs/GaAs heterostructures, grown by molecular beam epitaxy (MBE) at 400?°C, have been studied. As it was expected, inclusion of an n+ d-doped layer at each hetero-interface has reduced the barriers heights and series resistance of the structure significantly, while p+ d-doped layers ha...
متن کاملRadiation-induced zero-resistance states with resolved Landau levels
The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electron system exhibits an oscillatory-magnetoresistance with vanishing resistance in the vicinity of magnetic fields B = [4/(4j + 1)]Bf , where Bf = 2πfm ∗/e, m∗ is an the effective mass, e is the charge, f is the microwave frequency, and j =1,2,3... Here, we report transport with well-resolved Landau levels, and some transm...
متن کاملElectroluminescence from GaAs/AlGaAs Heterostructures in Strong in-Plane Electric Fields: Evidence for k- and Real-Space Charge Transfer
In the Gunn effect, which occurs in certain semiconductors in strong electric fields, electrons are driven out of a low-mass central valley into a heavy-mass side valley in k (momentum) space, ultimately resulting in negative differential resistance (NDR). Recently, there has been interest in the possibility of exploiting this phenomenon in heterostructured semiconductors, as a means to realize...
متن کاملGiant magnetoresistance oscillations caused by cyclotron resonance harmonics
For high-mobility two-dimensional electrons at a GaAs/AlGaAs heterojunction, we have studied, both experimentally and theoretically, the recently discovered giant magnetoresistance oscillations with nearly zero resistance in the oscillation minima which appear under microwave radiation. We have proposed a model based on nonequilibrium occupation of Landau levels caused by radiation which descri...
متن کاملGaAs Heterojunction Bipolar Transistor Emitter Design
We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...
متن کامل